Fishing – trapping – and vermin destroying
Patent
1988-12-21
1989-09-19
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 34, 437 56, 437 70, 437 41, 437 11, 437 45, 437911, 357 43, 357 91, H01L 21265
Patent
active
048681350
ABSTRACT:
A method for fabricating a Bi-CMOS device is disclosed herein, which device can include both vertical PNP and NPN components. The process steps include forming the reach-through N+ subcollector to the bipolar device without extra processing steps; combining into one mask the threshold adjust/well implants with self-aligned isolation leakage protection implants by using a self-aligned, removable oxide mask prior to field isolation; using a resist etch-back scheme to protect against emitter-to-base punch-through while self-aligning the pedestal and base; and also providing for the removal of the gate oxide at the emitter while maintaining it at the FET, without extra masks.
The device incorporates similar structural featues between the bi-polar and FET devices. The NPN and pFET can share the same well and a P+ diffusion (the p+ extrinsic base is the same as the p+ source). Also, the pnp and nFET can share the same well and an n+ diffusion.
REFERENCES:
patent: 4403395 (1983-09-01), Curran
patent: 4553315 (1985-11-01), McCarty
patent: 4696092 (1987-09-01), Doering et al.
patent: 4778774 (1988-10-01), Blossfeld
patent: 4784966 (1988-11-01), Chen
patent: 4818719 (1989-04-01), Yeh et al.
Ogura Seiki
Rovedo Nivo
Hearn Brian E.
International Business Machines - Corporation
Pawlikowski Beverly A.
Tognino Alexander
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