Method for manufacture of ultra-thin film capacitor

Details Method for manufacture of ultra-thin film capacitor Method for manufacture of ultra-thin film capacitor

1981-02-13

1982-06-08

Lusignan, Michael R.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

427 38, 427 79, 427 81, 204192SP, C23C 1500

Patent

active

043338089

ABSTRACT:
A suitable substrate is provided to which is applied a metal electrically conductive film electrode. The substrate and electrically conductive electrode film are then exposed to ion beam implantation of O+ or N+ ions to impregnate the surface of the metal electrode with O+ or N+ ions. Thereafter, the substrate and electrically conductive film having implanted O+ or N+ ions is annealed so as to stabilize the oxide structure which has been implanted into the surface of the electrically conductive film to provide an ultra-thin dielectric film.

REFERENCES:
patent: 3245895 (1966-04-01), Baker et al.
patent: 3988824 (1976-11-01), Bodway
patent: 4038167 (1977-07-01), Young
O'Connell, Formation of Resistive Films by Ion Bombardment, Colloquium on Ion Implantation, London (Jan. 1970).
Basavaiah et al., Annealing Josephson Junction Devices, IBM Tech. Discl. Bul., vol. 17, No. 11, Apr. 1975.

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