Method for manufacture of silicon carbide

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

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C01B 3136

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044105029

ABSTRACT:
Silicon carbide of improved quality is obtained by using a liquid silicic acid or modified liquid silicic acid as a silicic substance and carbon in a powdered form, a precursor of carbon in a powdered form, or a precursor of carbon in the form of a solution as a carbonaceous substance, and thermally treating these raw materials in a non-oxidative atmosphere. The silicon carbide thus produced is finely divided and in high-purity and suitable for use as raw material for the production of high-strength sintered articles.

REFERENCES:
patent: 3085863 (1963-04-01), Prener
patent: 3379647 (1968-04-01), Smudski

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