Method for manufacture of semiconductor device

Details Method for manufacture of semiconductor device Method for manufacture of semiconductor device

1990-07-24

1991-04-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 80, 437912, 437944, 148DIG100, 148DIG143, H01L 21265

Patent

active

050064789

ABSTRACT:
A method for manufacturing a semiconductor device, comprising the steps of forming a first resist layer, an intermediate layer and a second resist layer sequentially on a substrate; forming an aperture by removing a portion of the second resist layer where a T-shaped gate is to be later formed; over-etching a portion of the intermediate layer opposed to the aperture thereby forming in the intermediate layer an aperture larger than the first-mentioned aperture; and forming, in the first resist layer, an aperture which is smaller than the aperture in the second resist layer which is positioned inside thereof. Due to the combination of such successive steps, the lift-off process required to form a desires T-shaped gate can be substantially improved.

REFERENCES:
patent: 3994758 (1976-11-01), Ogawa et al.
patent: 4283483 (1981-08-01), Coane
patent: 4440804 (1984-04-01), Milgram
patent: 4489101 (1984-12-01), Shibata
patent: 4599790 (1986-07-01), Kim et al.
patent: 4804635 (1989-02-01), Young
patent: 4871687 (1989-10-01), Donzelli

Affiliated with

Also associated with

Rating

Method for manufacture of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacture of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacture of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2034251