Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-04-18
2006-04-18
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S048000, C257S295000, C257S421000, C365S158000, C365S173000
Reexamination Certificate
active
07029923
ABSTRACT:
A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.
REFERENCES:
patent: 4731757 (1988-03-01), Daughton et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4897288 (1990-01-01), Jenson
patent: 5496759 (1996-03-01), Yue et al.
patent: 5569617 (1996-10-01), Yeh et al.
patent: 6381171 (2002-04-01), Inomata et al.
patent: 6487110 (2002-11-01), Nishimura et al.
patent: 6555858 (2003-04-01), Jones et al.
patent: 6623987 (2003-09-01), Liu et al.
patent: 6649423 (2003-11-01), Anthony et al.
Arrott Anthony
Berg Lonny
Katti Romney R.
Larson William
Li Shaoping
Knobbe Martens Olson & Bear LLP
Nelms David
Tran Long
LandOfFree
Method for manufacture of magneto-resistive bit structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacture of magneto-resistive bit structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacture of magneto-resistive bit structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3549212