Method for manufacture of magneto-resistive bit structure

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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Details

C438S048000, C257S295000, C257S421000, C365S158000, C365S173000

Reexamination Certificate

active

07029923

ABSTRACT:
A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.

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