Method for manufacture of an interdigitated collector structure

Details Method for manufacture of an interdigitated collector structure Method for manufacture of an interdigitated collector structure

1980-04-28

1982-05-11

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148175, 156643, 156647, 156662, 357 20, 357 34, 357 36, 357 89, H01L 2120, H01L 2174

Patent

active

043286119

ABSTRACT:
A bipolar semiconductor is manufactured by forming a plurality of grooves along the vertical (111) planes in a high resistivity epitaxial silicon layer which is disposed on an N+ (110) oriented substrate. Low resistivity epitaxial silicon of the same conductivity type is then used to fill in the grooves, thus forming alternate vertical regions of high and low resistivity. A base region is then diffused into said epitaxial layer and a plurality of emitters regions are diffused into said base region at locations directly above the low resistivity epitaxial regions.

REFERENCES:
patent: 3220896 (1965-11-01), Miller
patent: 3244950 (1966-04-01), Ferguson
patent: 3312881 (1967-04-01), Yu
patent: 3312882 (1967-04-01), Pollock
patent: 3832225 (1974-08-01), Matsui et al.

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