Method for manufacture of an integrated MOS semiconductor array

Details Method for manufacture of an integrated MOS semiconductor array Method for manufacture of an integrated MOS semiconductor array

1990-10-09

1992-03-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 48, 437238, 437241, 427 96, H01L 2131

Patent

active

050949837

ABSTRACT:
A method of manufacture of an integrated MOS semiconductor array for the low-frequency range having MOS components and circuit paths arranged on a semiconductor substrate. Exposed surfaces between the circuit paths are made hydrophobic by germinating with hexamethyl disilazane ((CH.sub.3).sub.3 SiNHSi(CH.sub.3).sub.3), so that the occurrence of leakage currents is avoided. In addition, in an integrated MOS semiconductor array in which the MOS components and the circuit path are covered with a protective layer, the surface of this protective layer is made hydrophobic. As a result, both leakage currents and parasitic capacitances are prevented.

REFERENCES:
patent: 4163072 (1979-07-01), Soos
patent: 4628006 (1986-12-01), Rathbun et al.
B. Gorowitz, et al., "Applications of Plasma Enhanced Chemical Vapor Deposition in VLSI", Solid State Technology, Jun. 1985, pp. 197-203.
IBM Technical Disclosure Bulletin, vol. 28, No. 9, Feb. 1986.
IBM Technical Disclosure Bulletin, vol. 26, No. 2, Jul. 1983.
T. Wada, et al., "The Influence of Passivation Layer on Aluminum Corrosion on Simulated Microelectronics Circuit Pattern", Solid State Science and Technology, Mar. 1989, pp. 732-735.
Dean Freeman et al., "Properties of Low-Pressure Chemical Vapor Deposited Dielectric Films from Hexamethyl-Disilazane", J. Vac. Technol. A7(3), May/Jun., pp. 1446-14507.
German Search Report, 5/15/90.

Affiliated with

Also associated with

Rating

Method for manufacture of an integrated MOS semiconductor array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacture of an integrated MOS semiconductor array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacture of an integrated MOS semiconductor array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2284516