Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-01-08
2008-01-08
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257S014000, C257SE29068, C438S022000, C438S046000, C438S048000, C438S057000, C438S093000
Reexamination Certificate
active
07317202
ABSTRACT:
A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.
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Behres Alexander
Linder Norbert
Mayer Bernd
Andujar Leonardo
Cohen Pontani Lieberman & Pavane LLP
Osram Opto Semiconductors GmbH
Quinto Kevin
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