Method for manufacture of a semiconductor device

Details Method for manufacture of a semiconductor device Method for manufacture of a semiconductor device

1976-03-22

1978-09-19

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 59, B01J 1700

Patent

active

041142543

ABSTRACT:
A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms.
The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer.
The local oxidizing treatment causes the polycrystalline or silicon layer to pattern.

REFERENCES:
patent: 4001873 (1977-01-01), Kajiwara
IBM Technical Disclosure Bulletin, "Doped Polycystalline Field Shield Process," Abbas et al., p. 1981, vol. 15, No. 6, Nov. 1972.

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