Metal working – Method of mechanical manufacture – Electrical device making
Patent
1977-08-08
1979-03-20
Tupman, W.
Metal working
Method of mechanical manufacture
Electrical device making
29576R, 204 15, 2041293, B01J 1700
Patent
active
041446364
ABSTRACT:
A method and resulting structure for a relative humidity monitor which can be built into an integrated circuit chip. A small area on a silicon chip is made porous by anodic etching. This region is then oxidized and a metal counter electrode is deposited over part of the porous area. The surface area in the dielectric under the counter electrode is very high and because of the openness of the structure, ambient moisture can quickly diffuse into the dielectric under the electrode and adsorb onto the silicon dioxide surface. Changes in ambient humidity will then be reflected by measurable changes in capacitance or conductance of the device.
REFERENCES:
patent: 3835530 (1974-09-01), Kilbey
patent: 3919060 (1975-11-01), Pogge
IBM Technical Disclosure, "Dielectric Isolation of Si Devices" by Badami, vol. 18, No. 1, 6/75, pp. 116 & 117.
Burkhardt Paul J.
Poponiak Michael R.
International Business Machines - Corporation
Saile George O.
Tupman W.
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