Method for manufacture of a moisture sensor

Metal working – Method of mechanical manufacture – Electrical device making

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29576R, 204 15, 2041293, B01J 1700

Patent

active

041446364

ABSTRACT:
A method and resulting structure for a relative humidity monitor which can be built into an integrated circuit chip. A small area on a silicon chip is made porous by anodic etching. This region is then oxidized and a metal counter electrode is deposited over part of the porous area. The surface area in the dielectric under the counter electrode is very high and because of the openness of the structure, ambient moisture can quickly diffuse into the dielectric under the electrode and adsorb onto the silicon dioxide surface. Changes in ambient humidity will then be reflected by measurable changes in capacitance or conductance of the device.

REFERENCES:
patent: 3835530 (1974-09-01), Kilbey
patent: 3919060 (1975-11-01), Pogge
IBM Technical Disclosure, "Dielectric Isolation of Si Devices" by Badami, vol. 18, No. 1, 6/75, pp. 116 & 117.

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