Method for manufacture of a controllable power semiconductor ele

Fishing – trapping – and vermin destroying

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437 31, 437974, 148DIG126, 148DIG12, H01L 21332

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055061532

ABSTRACT:
Controllable power semiconductor components such as, for example, IGBTs and thyristors are provided, which, compared to known components, have a relatively lightly doped n-buffer zone, a relatively flat p-emitter, and an n-base having a comparatively long charge carrier life expectancy. An advantage is achieved that the controllable power semiconductor component has a temperature-independent tail current, despite a low on-state dc resistance and a high blocking voltage.

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