Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1998-05-06
2000-02-15
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 31, 438 39, 438 46, H01L 2120
Patent
active
060252073
ABSTRACT:
A method for the manufacture of a buried structure laser device for integration with an optical guide in a photonic circuit. This method brings about the successive growth, on a buffer layer doped with carriers of a first type and covering the entire surface of a substrate doped with carriers of the same type, a first guiding layer formed by a non-doped quaternary compound, an extremely thin intermediate layer highly doped with carriers of the first type. A second active layer is formed by a non-doped quaternary compound, and a protection layer is doped with carriers of a second type where only the active layer is etched in the form of one or more steps and then buried in a layer of sheathing doped with carriers of the second type.
REFERENCES:
patent: 5070510 (1991-12-01), Konushi et al.
patent: 5288659 (1994-02-01), Koch et al.
patent: 5568499 (1996-10-01), Lear
patent: 5703895 (1997-12-01), Ghirardi et al.
Dorgeuille Fran.cedilla.ois
Mersali Boumedienne
Chaudhuri Olik
France Telecom
Wille Douglas A.
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