Method for manufacture of a buried structure laser device for in

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

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438 31, 438 39, 438 46, H01L 2120

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active

060252073

ABSTRACT:
A method for the manufacture of a buried structure laser device for integration with an optical guide in a photonic circuit. This method brings about the successive growth, on a buffer layer doped with carriers of a first type and covering the entire surface of a substrate doped with carriers of the same type, a first guiding layer formed by a non-doped quaternary compound, an extremely thin intermediate layer highly doped with carriers of the first type. A second active layer is formed by a non-doped quaternary compound, and a protection layer is doped with carriers of a second type where only the active layer is etched in the form of one or more steps and then buried in a layer of sheathing doped with carriers of the second type.

REFERENCES:
patent: 5070510 (1991-12-01), Konushi et al.
patent: 5288659 (1994-02-01), Koch et al.
patent: 5568499 (1996-10-01), Lear
patent: 5703895 (1997-12-01), Ghirardi et al.

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