Method for making transistors

Details Method for making transistors Method for making transistors

1975-11-20

1976-12-14

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 156 17, H01L 21265

Patent

active

039973670

ABSTRACT:
Submicron plasma trimming of a patterened resist material is combined with ion implantation techniques to achieve submicron control of lateral doping profiles. This makes possible the high-yield fabrication of, for example, bipolar microwave transitors of the self-aligned-emitter type. The basic technique can also be supplied to the fabrication of high performance insulted-gate field-effect transistors, junction-gate field-effect transistors and Schottky-barrier field-effect transistors.

REFERENCES:
patent: 3592707 (1971-07-01), Jaccodine
patent: 3816198 (1974-06-01), LaCombe et al.
patent: 3890176 (1975-06-01), Bolon
Archer, "Low Noise Implanted Base Microwave Transistors" Solid State Electronics, vol. 17, pp. 387-393, 1974.
Kamioka, et al., "A New Submicron Emitter Formation . . . etc.," IEDM Tech. Dig., pp. 279-282, 1974.

Affiliated with

Also associated with

Rating

Method for making transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1342965