Method for making three dimensional ferroelectric memory

Details Method for making three dimensional ferroelectric memory Method for making three dimensional ferroelectric memory

1998-02-23

1999-12-21

Bowers, Charles

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

H01L 2100

Patent

active

060048255

ABSTRACT:
A three dimensional ferroelectric memory device formed on a semiconductor substrate has insulative material formed between rows of conductors to reduce cross talk between the conductors. Access circuitry or other circuitry is formed beneath the three dimensional structure. Continuous conductors, or staggered vias provide for connection to conductors forming the memory cells. An access circuit is provided which eliminates the need for an access transistor for each memory cell by using a memory cell with a reference cell in combination with sensing circuitry. Read cycles are followed by write cycles and an equilibrate cycle to reverse the effects of destructive reads on the memory cells. Side by side memory structures provide the ability to access using either a folded or open bit line circuit.

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