Method for making thinned charge-coupled devices

Details Method for making thinned charge-coupled devices Method for making thinned charge-coupled devices

1991-03-18

1992-11-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437226, 437974, 437 86, 437225, 148DIG12, 148DIG135, H01L 2158, H01L 21339

Patent

active

051622513

ABSTRACT:
A standard thick silicon charge-coupled device (FIG. 1A) has its pixel face mounted to a transparent, optically flat glass substrate using a thin layer of thermoset epoxy. The backside silicon of the charge-coupled device is thinned to 10 .+-.0.5 um using a two-step chemi-mechanical process. The bulk silicon is thinned to 75 um with a 700 micro-grit aluminium oxide abrasive and is then thinned and polished to 10 um using 80 nm grit colloidal silica. Access from the backside to the aluminum bonding pads (36 of FIG. 5) of the device is achieved by photolithographic patterning and reactive ion etching of the silicon above the bonding pads. The charge-coupled device is then packaged and wire-bonded in a structure which offers support for the silicon membrane and allows for unobstructed backside illumination.

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patent: 4266334 (1981-05-01), Edwards et al.
patent: 4321747 (1982-03-01), Takemura et al.
patent: 4465549 (1984-08-01), Ritzman
patent: 4814283 (1989-03-01), Temple et al.
patent: 4876222 (1989-10-01), Luttmer et al.

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