Method for making thin-film transistors

Details Method for making thin-film transistors Method for making thin-film transistors

1982-12-01

1984-09-04

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

29571, 29591, 156655, 204 38A, 357 4, 357 23, C25D 544, H01L 4902

Patent

active

044695683

ABSTRACT:
A method for making a thin-film transistor wherein a gate insulating layer is formed by anodizing two oxide layers on the substrate and then etching the assembly to completely remove the uppermost one of these layers to leave the lowermost layer so as to serve as the gate insulating layer.

REFERENCES:
Kallfass, T. et al., "High Voltage Thin Film Transistors . . . Gate Oxide" in Thin Solid Films, vol. 61, No. 2, pp. 259-264, Aug. 1, 1979.

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