Method for making thin film transistors

Details Method for making thin film transistors Method for making thin film transistors

1996-09-13

1998-03-17

Trinh, Michael

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

437 40TFI, 437 21, 437913, H01L 2186

Patent

active

057286043

ABSTRACT:
A method for making semiconductor thin film transistors (TFTs) having a bottom gate such that the gate electrode is formed in a furrow of an insulating layer, with a gate oxide and body polysilicon formed thereon, thereby allowing the source and drain level to be in a smooth plane parallel with the gate level. Steps that may be included in the disclosed method for fabricating thin film transistors having a bottom gate are: a) forming an insulating layer on a substrate, and forming a furrow by etching the insulating layer at a portion corresponding to where a gate line is to be formed; b) forming a gate line in the furrow by depositing a conductive layer, and etching back the conductive layer; c) forming a gate insulator on the gate line, forming a semiconductor layer on the gate insulator; and d) forming impurity regions at opposite sides of the gate line.

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16Mbit SRAM Cell Technologies for 2.0V Operation; H. Ohkubo, et al.; 1991 IEEE; pp. 481-484 IDEM.

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