Method for making thin film III-V compound semiconductors for so

Coating processes – Electrical product produced – Photoelectric

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136 89TF, 148174, 148175, 156607, 156613, 427 86, 427 87, H01L 3118

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041593545

ABSTRACT:
Thin semiconductor films of compounds from groups III-V of the periodic table suitable for solar cells are formed on low cost substrates by forming on the substrate an intermediate film that is chemically related to but has a lower melting point than the desired semiconductor. The desired semiconductor film is then grown on this intermediate film while it is in a molten condition. The molten intermediate layer isolates the substrate from the desired semiconductor layer so that as that layer grows, large area crystals result. The intermediate film may be a semiconductor III-V compound or may be a group III metal alloy.

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patent: 3993533 (1976-11-01), Milnes et al.
patent: 4053326 (1977-10-01), Forrat
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Cuomo et al., "Fabrication of Large Grain Polycrystalline Thin Films", IBM Tech. Disc. Bull., vol. 18, No. 9, Feb. 1976, pp. 3063-3064.
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Konagai et al., "Thin Film GaAlAs-GaAs Solar Cells by Peeled Film Technology", Spring Meeting Electrochemical Soc., Wash., D.C., May 1976, vol. 76-1, pp. 554-555.
Milnes et al., "Peeled Film Technology for Solar Cells", 11th IEEE Photospecialist Conference, May 6-8, 1975, pp. 338-341.

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