Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-04-04
2006-04-04
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000
Reexamination Certificate
active
07022585
ABSTRACT:
In one inventive aspect, a thin film device is manufactured by (a) forming a porous semiconductor layer in the form of a thin film on an original substrate, the formation being immediately followed by (b) separation of the thin film by a lift-off process from the original substrate; (c) transfer of the thin film to a dummy support, the thin film not being attached to the dummy support; (d) fabrication of a device on top of the thin film; and (e) transfer and attachment of said device on said thin film on a foreign substrate.
REFERENCES:
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 6211038 (2001-04-01), Nakagawa et al.
patent: 6258698 (2001-07-01), Iwasaki et al.
patent: 6326280 (2001-12-01), Tayanaka
patent: 6500731 (2002-12-01), Nakagawa et al.
patent: 2002/0171080 (2002-11-01), Faris
patent: A-0767486 (1997-04-01), None
patent: A-0993029 (2000-04-01), None
patent: 1 132 952 (2001-09-01), None
patent: A-1132952 (2001-09-01), None
S. M. Sze: “Semiconductor Devies Physics and Technology” 1985, John Wiley and Sons, Murray Hill, New Jersey, USA, XP002311145 ISBN: 0-471-87424-8 *p. 441-442 *figure 11.
Bilyalov Renat
Poortmans Jef
Solanki Chetan Singh
Interuniversitair Microelektronica Centrum (IMEC)
Knobbe Martens Olson & Bear LLP
Nguyen Tuan H.
LandOfFree
Method for making thin film devices intended for solar cells... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making thin film devices intended for solar cells..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making thin film devices intended for solar cells... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3529419