Method for making TFT-LCD having black matrix in source and...

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Reexamination Certificate

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C349S106000, C349S138000

Reexamination Certificate

active

06646661

ABSTRACT:

CROSS-REFERENCES TO RELATED APPLICATIONS
This application claims the benefit of: Korean Patent Application No. 2000-28396, filed on May 25, 2000; Korean Patent Application No. 2000-28397, filed on May 25, 2000; and Korean Patent Application No. 2000-35105, filed on Jun. 24, 2000 the entirety of each of which is hereby incorporated by reference for all purposes as if fully set forth herein.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a display device, and more particularly, to a liquid crystal display (LCD) device and a method for manufacturing the same.
2. Discussion of the Related Art
Ultra-thin sized flat panel displays having a display screen with a thickness of several centimeters or less, and in particular, flat panel LCD devices, are widely used in monitors for notebook computers, spacecraft, and aircraft.
Such LCD devices have low power consumption and are easy to carry. In this respect, the LCD device is receiving much attention as an advanced display device that can substitute for a cathode ray tube (CRT).
An LCD device includes a thin film transistor (TFT) substrate, a color filter substrate, and a liquid crystal layer sealed between the TFT substrate and the color filter substrate. The LCD is a non-light-emitting device that can obtain an image effect based on electro-optical characteristics of the liquid crystal layer.
In other words, a TFT array and pixel electrodes are formed on the TFT substrate, while a black matrix pattern, a color filter layer, and a common electrode are formed on the color filter substrate. The TFT substrate and the color filter substrate are bonded to each other by a sealant such as epoxy resin.
A driving circuit is connected with the TFT substrate using a tape carrier package as a medium. The driving circuit generates various control signals and signal voltages to display images.
The development and application of TFT-LCD industries have been accelerated in accordance with an increase of the dimensions and increase of the resolution of LCD devices. To increase the productivity and ensure the low cost, many efforts have been continued in view of simplified process steps and an improvement of yield.
A method for manufacturing an LCD device according to an example of the related art will be described with reference to the accompanying drawings.
FIGS. 1
a
to
1
f
are sectional views illustrating process steps of manufacturing a lower substrate of an LCD device according to an example of the related art, and
FIGS. 2
a
to
2
e
are sectional views illustrating process steps of an upper substrate of an LCD device according to an example of the related art.
A method for manufacturing a lower substrate of an LCD device will be described with reference to
FIGS. 1
a
to
1
f.
As shown in
FIG. 1
a,
a metal layer which is a material for a gate electrode, such as Al, Ta, Cr, and Al alloy, is formed on a first insulating substrate
1
. A gate electrode
2
is formed by a patterning process using a first mask (not shown).
As shown in
FIG. 1
b
, a gate insulating film
3
, preferably of SiN
x
, is formed on the first insulating substrate
1
including the gate electrode
2
by a chemical vapor deposition (CVD) process. A semiconductor layer
4
is then formed on the gate insulating film
3
over the gate electrode
2
.
As shown in
FIG. 1
c
, the semiconductor layer
4
is patterned using a second mask (not shown) to form an active pattern
4
a
. A metal layer
5
such as Al, Cr, Mo, and Al alloy is formed by a sputtering process and then selectively removed to form a source electrode
6
a
and a drain electrode
6
b
, as shown in
FIG. 1
d
. The source and drain electrodes
6
a
and
6
b
are formed by an etching process using a third mask (not shown). A passivation film
7
is formed on the entire surface, including the source and drain electrodes
6
a
and
6
b.
As shown in
FIG. 1
e
, a contact hole
8
is formed using a fourth mask (not shown) to expose a portion of the drain electrode
6
b
. As shown in
FIG. 1
f
, an indium tin oxide (ITO) layer for a pixel electrode is formed on the entire surface so that the layer is electrically connected with the drain electrode
6
b
through the contact hole
8
. The ITO layer is patterned by an etching process using a fifth mask (not shown) to form a pixel electrode
9
.
A method for manufacturing an upper substrate for an LCD device will now be described with reference to
FIGS. 2
a
to
2
e.
As shown in
FIG. 2
a
, a light-shielding material is formed on a second insulating substrate la and patterned by photolithography process using a first mask (not shown) to form a black matrix pattern
12
. The black matrix pattern
12
is formed on the second insulating substrate la in a matrix arrangement. The black matrix pattern
12
has a double layered structure of CrO
x
and Cr or a triple layered structure of CrO
x
, CrN
x
and Cr.
As shown in
FIG. 2
b
, a first color filter
14
a
among red (R), green (G), and blue (B) color filters, is formed on the black matrix pattern
12
by a photolithography process using a second mask (not shown).
Subsequently, as shown in
FIGS. 2
c
and
2
d
, a second color filter
14
b
and a third color filter
14
c
are selectively formed in the same manner as the formation of the first color
14
a.
FIG. 2
c
is a sectional view showing the second color filter
14
b
, and
FIG. 2
d
is a sectional view showing the third color filter
14
c
. Although not shown, separate masks (third and fourth masks) are respectively required when the second color filter
14
b
and the third color filter
14
c
are formed.
After, the black matrix pattern
12
and R, G, and B color filters
14
a
,
14
b
and
14
c
are formed on the second insulating substrate
1
a
, then, as shown in
FIG. 2
e
, an ITO layer is formed on the entire surface by a sputtering process and is patterned using a fifth mask (not shown) to form a common electrode
16
.
Once the upper substrate and the lower substrate are manufactured as above, the two substrates are bonded to each other and liquid crystal material is injected between the substrates through a liquid crystal injection hole. Thus, the process for manufacturing an LCD device according to the example of the related art is completed.
However, the process for manufacturing an LCD device according to the example of the related art has several problems.
Since a total of ten masks are required in manufacturing the lower and upper substrates the manufacturing cost increases and the process time increases due to a number of photolithography processes, thereby increasing total turn around time (TAT).
SUMMARY OF THE INVENTION
Accordingly, the present invention is directed to an LCD device and a method for manufacturing the same that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
An object of the present invention is to provide an LCD device and a method for manufacturing the same that reduces the manufacturing cost and TAT, and improves the productivity by minimizing the number of masks required for the process steps.
Another object of the present invention is to provide an LCD device and a method for manufacturing the same in which a color filter layer is formed on a pixel electrode in a state where a TFT is not driven.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the scheme particularly pointed out in the written description and claims hereof as well as the appended drawings.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, an LCD device according to the present invention includes first and second substrates, a TFT formed in a predetermined region on the first substrate, a pixel electrode formed in a pixel region on the first substra

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