Method for making T-gate of field effect transistor

Details Method for making T-gate of field effect transistor Method for making T-gate of field effect transistor

1994-12-19

1997-12-02

Tsai, Jey

Fishing, trapping, and vermin destroying

437 39, 437175, 437912, 437944, 148DIG100, 148DIG140, H01L 21265

Patent

active

056935480

ABSTRACT:
A method for making a T-shaped gate of a field effect transistor is disclosed. The method includes the steps of sequentially depositing first and second photoresist layers on a semiconductor substrate and performing an exposure using electron beams having different energy, one of the electron beams having a first energy to lightly expose only the second photoresist layer and the other of the electron beams having a second energy to lightly expose all of the first and second layers. The invention reduces gate resistance and parasitic capacitance of the T-shaped gate.

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patent: 5432125 (1995-07-01), Misawa et al.
patent: 5445979 (1995-08-01), Hirano

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