Metal working – Method of mechanical manufacture – Electrical device making
Patent
1984-10-29
1985-09-17
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Electrical device making
29571, 29578, 148DIG131, 148DIG100, 156643, 156650, 357 49, H01L 21312, H01L 21461
Patent
active
045411697
ABSTRACT:
Disclosed herein is a method enabling the use of four or more levels of metal over silicon chips whereby increased wiring density, reduced wiring capacitances and improved interconnection reliability are achieved. Stud vertical wiring and special etching procedures to accommodate differences in stud elevation and in stud size, are features which provide substantial planarity in the successive levels.
More particularly, the present method includes steps for: the "lift-off" deposition of metal studs on metal wires resulting from the patterning of the layer of the first level of metallization, deposition of a first insulating layer of a material such as silicon dioxide, planarization of said first layer using a standard etch back technique with a planarization medium, until the most elevated stud is exposed, then deposition of a second insulating layer of a material such as silicon nitride over the structure and the etching of the insulator with the same mask pattern that was used to delineate the studs, in order to expose all of the remaining studs.
REFERENCES:
patent: 3801880 (1974-04-01), Harada et al.
patent: 3976524 (1976-08-01), Feng
patent: 4025411 (1977-05-01), Ma et al.
patent: 4089766 (1978-05-01), Paal et al.
patent: 4307180 (1981-12-01), Pagge
patent: 4333227 (1982-06-01), Horng et al.
patent: 4367119 (1983-01-01), Logan et al.
patent: 4410622 (1983-10-01), Dalal et al.
patent: 4470874 (1984-09-01), Bartush et al.
patent: 4506434 (1985-03-01), Ogawa et al.
IBM TDB, May 1984, pp. 6506-6507.
IBM TDB Sep. 1977, p. 1381.
IBM TDB, Feb. 1977, p. 3364.
IBM TDB, Sep. 1980, pp. 1394 and 1395.
IBM TDB, Feb. 1981, p. 4140.
Haase Robert J.
Hearn Brian E.
Hey David A.
International Business Machines - Corporation
LandOfFree
Method for making studs for interconnecting metallization layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making studs for interconnecting metallization layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making studs for interconnecting metallization layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-363569