Method for making solid state image sensing device

Details Method for making solid state image sensing device Method for making solid state image sensing device

1990-06-27

1991-08-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 2, 437 53, H01L 3118

Patent

active

050413929

ABSTRACT:
In a solid state image sensing device of p-conductivity type well, photo-electro converting region (1) are configurated to have larger area as depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.

REFERENCES:
patent: 3838439 (1974-09-01), Biard
patent: 4527182 (1985-07-01), Ishihara et al.
patent: 4630091 (1986-12-01), Kuroda et al.
patent: 4663771 (1987-05-01), Takeshita et al.
Control of Blooming in CC Imagers; Kosonocky et al., 6/76; pp. 1-23.

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