Method for making silicon-germanium devices using germanium impl

Details Method for making silicon-germanium devices using germanium impl Method for making silicon-germanium devices using germanium impl

1992-04-09

1995-06-20

Nguyen, Nam

Fishing, trapping, and vermin destroying

437 24, 437976, 257286, 257288, H01L 2120

Patent

active

054260698

ABSTRACT:
Silicon-germanium devices including MOSFETs, photogates and photodiodes, are produced by implanting the Si or polycrystalline silicon substrate with Ge.sup.+, to realize active SiGe regions within Si which are substantially free from defects, at an appropriate point in the fabrication by conventional techniques.

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