Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-05-06
1999-09-14
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 88, 117105, C30B 2502
Patent
active
059517573
ABSTRACT:
A method for fabricating silicon-germanium alloy on a sapphire substrate of the present invention comprises the steps of passivating a surface of a sapphire substrate, maintaining a deposition temperature of about 900 degrees C., exposing the passivated surface to a flow of about 1 slm of about 2 percent silane in a hydrogen carrier and a flow of at least 200 sccm of about 10 percent germane in a hydrogen carrier to form a layer of single crystal silicon germanium alloy on the passivated surface of the sapphire substrate, and ramping the temperature down to about 650 degrees C. during the step of exposing the passivated surface to the germane gas.
REFERENCES:
patent: 5205871 (1993-04-01), Godbey et al.
"Epitaxial Growth of SiGe on Al.sub.2 O.sub.3 using Si.sub.2 H.sub.6 gas Ge Solid Source Molecular Beam Epitaxy"; Wado et al., Journal of Crystal Growth 169 (1996) pp. 457-462, Apr. 1996.
de la Houssaye Paul R.
Dubbelday Wadad B.
Kasa Shannon D.
Lagnado Isaac
Fendelman Harvey
Hiteshew Felisa
Kagan Michael A.
The United States of America as represented by the Secretary of
Whitesell Eric James
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