Method for making silica strain test structures

Details Method for making silica strain test structures Method for making silica strain test structures

1997-06-25

1999-05-04

Bowers, Charles

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

438 8, H01L 2100

Patent

active

058997016

ABSTRACT:
A method for forming silica stain on a substrate to facilitate monitoring of the silica stain during integrated circuit manufacture. The method includes providing a silica stain test structure which has a silicon substrate, a hydrophilic silicon dioxide containing layer disposed above the silicon substrate, and a plurality of cavities formed in the silicon substrate through the silicon dioxide containing layer. The cavities have hydrophobic sidewalls. The method also includes exposing the silica stain test structure to deionized water, and drying the silica stain test structure to form the silica stain on the silicon dioxide containing layer.

REFERENCES:
patent: 5757479 (1998-05-01), Haga et al.
patent: 5815942 (1996-12-01), Wu et al.
patent: 5851925 (1996-07-01), Beh et al.
Jin-Goo Park et al., "Effects of Drying and Wettability of Silicon on the Formation of Water Marks in Semiconductor Processing," Jun. 1995, J. Electrochem. Soc., vol. 142, No. 6, pp. 2028-2031.
Scott Mackinnon, "Water-Spot Formation on Hydrophobic Silicon Surfaces," 1994, Microcontamination Conference Proceedings Sematech, pp. 173-184.

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