Method for making shallow trench marks

Details Method for making shallow trench marks Method for making shallow trench marks

1997-12-01

1999-10-05

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

438462, H01L 2176

Patent

active

059638168

ABSTRACT:
The separate formation of alignment marks and manufacturing a semiconductor device comprising photolithographically printing circuit patterns is avoided by utilizing trenches formed when etching to form shallow isolation trenches, thereby increasing manufacturing throughput and reducing costs. Embodiments include utilizing alignment trenches having a depth of about 2,400.ANG. to less than about 4,000.ANG., e.g., 3,000.ANG., formed substantially simultaneously with forming isolation trenches having substantially the same depth as the alignment trenches.

REFERENCES:
patent: 5470782 (1995-11-01), Schwalke et al.

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