Gas separation: apparatus – Electric field separation apparatus – Electrode cleaner – apparatus part flusher – discharger – or...
Patent
1974-08-02
1979-11-13
Smith, John D.
Gas separation: apparatus
Electric field separation apparatus
Electrode cleaner, apparatus part flusher, discharger, or...
96 27R, 96 35, 148187, 156662, 1566591, 427 82, 427 93, 427 94, 427108, 427259, H01L 2184, H01L 2186
Patent
active
041742176
ABSTRACT:
A semiconductor structure from which various types of active semiconductor devices can be formed is made of a semiconductor island on a transparent substrate, having thereon an electrically insulating layer of a protective material, such as silicon dioxide, which extends onto and covers the sides of the semiconductor island. The protective layer can either cover only the sides of the semiconductor island or extend over the top edge of the island. The protective layer is made by etching through a photoresist mask made of a negatively reacting photoresist which is formed by exposure to irradiation from beneath the uncovered surface of the substrate, whereby the thickness of the silicon island and the flux density of the irradiation are selected so that for a particular duration, the irradiation is completely attenuated by the semiconductor island.
REFERENCES:
patent: 3508982 (1970-04-01), Shearin, Jr.
patent: 3649268 (1972-03-01), Chu et al.
patent: 3740280 (1973-06-01), Ronen
patent: 3743847 (1973-07-01), Boland
Kuhl et al., Optical Investigation of Different Silicon Films, in J. Electrochem. Soc.:Solid-State Science and Technology, 121(11):pp. 1496-1500, Nov. 1974.
Sze, S. M., Physics of Semiconductor Devices, 1969, John Wiley & Sons, New York, p. 661.
Christoffersen H.
Cohen D. S.
RCA Corporation
Smith John D.
Williams R. P.
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