Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
Reexamination Certificate
2007-02-23
2010-10-19
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Forming schottky junction
Compound semiconductor
C438S586000, C257SE21425, C257SE29311, C257SE29148, C257SE29271, C257SE21047, C257SE21163, C257SE21173
Reexamination Certificate
active
07816240
ABSTRACT:
A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal.
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Clifton Paul A.
Connelly Daniel J.
Faulkner Carl M.
Grupp Daniel E.
Acorn Technologies, Inc.
Richards N Drew
Sonnenschein Nath & Rosenthal LLP
Sun Yu-Hsi
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