Method for making semiconductor devices with low dislocation def

Details Method for making semiconductor devices with low dislocation def Method for making semiconductor devices with low dislocation def

1990-08-02

1992-10-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437110, 437132, 437133, 148DIG42, H01L 2120

Patent

active

051589079

ABSTRACT:
Semiconductor devices having a low density of dislocation defects can be formed of epitaxial layers grown on defective or misfit substrates by making the thickness of the epitaxial layer sufficiently large in comparison to the maximum lateral dimension. With sufficient thickness, threading dislocations arising from the interface will exit the sides of the epitaxial structure and not reach the upper surface. Using this approach, one can fabricate integral gallium arsenide on silicon optoelectronic devices and parallel processing circuits. One can also improve the yield of lasers and photodetectors.

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