Method for making semiconductor device with metal deposited on e

Details Method for making semiconductor device with metal deposited on e Method for making semiconductor device with metal deposited on e

1995-06-07

1997-02-04

Fourson, George

Fishing, trapping, and vermin destroying

437194, 437154, 437155, 437246, 437 44, H01L 2144, H01L 2122

Patent

active

055997414

ABSTRACT:
A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.

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