Metal working – Method of mechanical manufacture – Electrical device making
Patent
1984-04-04
1986-01-14
Saba, William G.
Metal working
Method of mechanical manufacture
Electrical device making
29576E, 29578, 148174, 148175, 148188, 148DIG123, 148DIG124, 148DIG169, 357 34, 357 59, H01L 21225, H01L 21285
Patent
active
045638071
ABSTRACT:
Semiconductor device, such as bipolar transistor, is made by molecular beam epitaxy, wherein a emitter layer (27) and overriding contact regions (28) of polycrystalline silicon are grown continuously on a silicon substrate (23+26) without breaking high vacuum, thus eliminating the adverse interface of natural oxide film under the polycrystalline silicon layer (28) and the adverse donor-acceptor compensation while attaining a well controlled h.sub.FE and enabling a shallow emitter junction.
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Swartz et al., "Uncompensated . . . Bipolar Transistor . . . Molecular Beam. . . " IEEE Electron Dev. Ltn., vol. EDL-2, No. 11, Nov. 1981, pp. 293-295.
Akiyama Atsuko
Fujita Tsutomu
Kawakita Kenji
Sakai Hiroyuki
Takemoto Toyoki
Matsushita Electric - Industrial Co., Ltd.
Saba William G.
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