Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-09-13
2005-09-13
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S047000, C438S739000
Reexamination Certificate
active
06943050
ABSTRACT:
The invention provides a method of fabricating a semiconductor device in which a more satisfactory selective etching ratio is ensured when AlGaAs is used for a layer provided with a semiconductor element, and provides a semiconductor element composite, an electro-optical apparatus, and an electronic system, each including the semiconductor device fabricated by the method. A method of fabricating a semiconductor device includes: forming a functional layer provided with a semiconductor element on a substrate with a sacrificial layer therebetween; and detaching the functional layer from the substrate by etching the sacrificial layer. The sacrificial layer is composed of an N-type Al(x1)Ga(1−x1)As layer and the functional layer is composed of an Al(x2)Ga(1−x2)As semiconductor layer, where x1>x2. Using hydrochloric acid or hydrofluoric acid with a concentration of 0.01% to 5% by weight as an etchant, the sacrificial layer is etched while the sacrificial layer is being irradiated with light.
REFERENCES:
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 5073230 (1991-12-01), Maracas et al.
patent: 5244818 (1993-09-01), Jokerst et al.
patent: 5256580 (1993-10-01), Gaw et al.
patent: 5286335 (1994-02-01), Drabik et al.
patent: 5300788 (1994-04-01), Fan et al.
patent: 5344517 (1994-09-01), Houlding
patent: 5401983 (1995-03-01), Jokerst et al.
patent: 5453405 (1995-09-01), Fan et al.
patent: 5465009 (1995-11-01), Drabik et al.
patent: 5827751 (1998-10-01), Nuyen
patent: 6033995 (2000-03-01), Muller
patent: 6214733 (2001-04-01), Sickmiller
patent: 6576564 (2003-06-01), Agarwal
patent: 6577785 (2003-06-01), Spahn et al.
patent: 6706546 (2004-03-01), Yoshimura et al.
patent: 2002/0028045 (2002-03-01), Yoshimura et al.
patent: 2002/0177246 (2002-11-01), Hang et al.
patent: 2004/0113225 (2004-06-01), Ogihara
patent: 2004/0130015 (2004-07-01), Ogihara et al.
patent: A 57-51781 (1982-03-01), None
patent: A 59-194393 (1984-11-01), None
patent: A 63-70257 (1988-03-01), None
patent: A 63-175860 (1988-07-01), None
patent: A 2-135359 (1990-05-01), None
patent: A 2-135361 (1990-05-01), None
patent: A 2-209988 (1990-08-01), None
patent: A 3-37992 (1991-02-01), None
patent: A 3-152184 (1991-06-01), None
patent: A 6-151720 (1994-05-01), None
patent: A 6-151946 (1994-05-01), None
Yablonovitch, .E., et al, “Extreme Selectivity in the lift-off of epitaxial GaAs films”, Appl.Phys.Lett.51 (26), Dec. 28, 1987, pp. 2222-2224.
Fourson George
Seiko Epson Corporation
LandOfFree
Method for making semiconductor device, semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making semiconductor device, semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making semiconductor device, semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3398474