Method for making semiconductor device free from electrical shor

Details Method for making semiconductor device free from electrical shor Method for making semiconductor device free from electrical shor

1987-08-06

1989-03-14

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437 4, 437170, 437923, 437939, 136244, 136258, 136290, H01L 3118

Patent

active

048124150

ABSTRACT:
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.

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