Method for making semi-insulating substrate by post-process heat

Details Method for making semi-insulating substrate by post-process heat Method for making semi-insulating substrate by post-process heat

1982-09-29

1984-07-10

Upendra, Roy

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 58, 357 91, H01L 21225, H01L 754

Patent

active

044591594

ABSTRACT:
A method for making semiconductor integrated circuits which improves and decreases fringing capacitance in semiconductor integrated circuits. An oxygenated, single-crystal silicon lamella is lightly doped, producing an excess of holes, thereby forming a semiconductor substrate. The substrate is used to fabricate semiconductor devices in the usual way, except that density may be slightly increased. After fabrication, the substrate is heated, preferably at 450.degree. C., until resistivity of the substrate has increased so that non-diffused regions of the substrate are substantially non-conductive.

REFERENCES:
patent: 3909307 (1975-08-01), Stein
patent: 4116719 (1978-09-01), Shimizu et al.
patent: 4220483 (1980-09-01), Cazcarra
patent: 4344815 (1982-08-01), Cazarra et al.
patent: 4393578 (1983-07-01), Cady et al.
patent: 4420870 (1983-12-01), Kimura
Antoniadis et al., J. Electrochem. Soc. 125 (1978) 813.
Wruck et al., Phys. Stat. Solid 56a (1979) 557.
Glowinski et al., J. Phys. Chem. Solids, 38 (1977) 963.
Murgai, et al., "Microdistribution of Oxygen in Silicon," J. Electrochemical Society, Solid-State Science and Technology, vol. 127, No. 5, May 1980-pp. 1182-1186.
Fuller and Logan, "Effect of Heat Treatment Upon the Electrical Properties of Silicon Crystals"; Journal of Applied Physics, vol. 28, No. 12, p. 1427, Dec., 1957.

Affiliated with

Also associated with

Rating

Method for making semi-insulating substrate by post-process heat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making semi-insulating substrate by post-process heat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making semi-insulating substrate by post-process heat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1575381