Method for making self-electro-optical device and devices made t

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437107, 437126, 437129, 437133, 156610, 372 43, 372 45, 372 99, H01L 21203

Patent

active

052984540

ABSTRACT:
Applicants have discovered a method of reproducibly fabricating SEED devices having an enhanced contrast ratio by adjusting the thickness of a cap layer in relation to the reflector stacks to form a Fabry-Perot cavity. Specifically, after growth of the reflector stack and the quantum wells, the optical thickness of the region above reflector stacks is measured without breaking vacuum, and based on such measurement a cap layer is grown of sufficient thickness to form a Fabry-Perot cavity for light of desired wavelength. The result is a device with enhanced contrast between the "on" and "off" states sufficiently so that the state can be directly read without differential processing.

REFERENCES:
patent: 5034344 (1991-07-01), Jewell et al.
D. A. B. Miller, "Quantum Well Optoelectronic Switching Devices", International Journal of High Speed Electronics, vol. 1, No. 1, pp. 19-46 (1990).
Chirovsky et al., "Batch-Fabricated Symmetric Self-Electro-Optic Effect Devices", OSA Proceedings on Photonic Switching, vol. 3, p. 2 (1989).
Pearton, "Ion Implantation for Isolation of III-V Semiconductors", Materials Science Reports, vol. 4, p. 315 (1990).
Anholt, et al. "Ion Implantation into Gallium Arsenide", Journal of Applied Physics, vol. 64, p. 3429 (1988).
K. Bacher, et al. "Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections", Appl. Phys. Lett. vol. 61, pp. 1387-1389, (1992).
Giugni et al. "New Self electro-optic effect device using two wavelengths in InGaAs/AlGaAs Multiple Quantum Wells" Appl. Phys. Lett. 61(1992), 376-378.
Miller et al. "Novel hybrid optically bistable switch: The Quantum Well Self electro-optic effect device" Appl. Phys. Lett. 45(1984), 13-15.
Fujiwara et al. "Electro-optical bistability in Strained In.sub.x Ga.sub.1-x As/Al.sub.0.15 Ga.sub.0.85 As Multiple Quantum Wells" Appl. Phys. Lett. 57(1990), 2234-2236.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for making self-electro-optical device and devices made t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making self-electro-optical device and devices made t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making self-electro-optical device and devices made t will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-791322

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.