Method for making self-aligned ohmic contacts

Details Method for making self-aligned ohmic contacts Method for making self-aligned ohmic contacts

1988-09-02

1991-01-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 80, 437175, 437178, 437179, 437187, 437912, 437984, H01L 21265

Patent

active

049853694

ABSTRACT:
A method of making a semiconductor device with self-aligned ohmic contacts which exhibits substantially reduced shadowing. The gate material is covered with a layer of gate mask material. The gate mask material is selectively removed to form a gate mask having sidewalls with slope profiles of an inclination sufficient to avoid maximum shadow encroachment for subsequent material depositions. Gate mask material is characterized by the sidewalls having an angularity relative to the surface of the substrate which is at least as great as the angle of evaporative deposition of ohmic contact material from a point evaporative source to the extreme gate position on the substrate.

REFERENCES:
patent: 3761785 (1973-09-01), Pruniaux
patent: 3943622 (1976-03-01), Kim et al.
patent: 3951708 (1976-04-01), Dean
patent: 4048712 (1977-09-01), Buiatti
patent: 4525919 (1985-07-01), Fabian
patent: 4534826 (1985-08-01), Gath

Affiliated with

Also associated with

Rating

Method for making self-aligned ohmic contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making self-aligned ohmic contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making self-aligned ohmic contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-55091