Method for making seal-ring structure with ESD protection device

Details Method for making seal-ring structure with ESD protection device Method for making seal-ring structure with ESD protection device

1998-03-18

1999-12-07

Tsai, Jey

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

438 10, H01L 21332

Patent

active

059982454

ABSTRACT:
The ESD circuit of the present invention comprises a protection device, and output circuitry. The ESD circuitry illustratively comprises an NMOS and PMOS transistor and two protective diodes. However, in place of the NMOS and PMOS transistors, any two-terminal protection device may be used. The protection device of the present invention comprises the diodes of the ESD circuitry. These diodes are formed within the seal-ring structure of an IC. The seal-ring structure is formed using the following steps. First, a field oxide is grown. N.sup.+ and P.sup.+ impurities are diffused into the substrate. An insulating layer is then grown over the oxide, P.sup.+, and N.sup.+ regions. The insulating layer is etched back, uncovering the substrate, P.sup.+ region, and a portion of the N.sup.+ region. Similarly, a thick aluminum layer is deposited and etched back to form a first connection layer. Subsequently, an insulating layer is formed over the first insulating layer. A second thick aluminum layer is then deposited and etched to form the second connection layer.

REFERENCES:
patent: 5707886 (1998-01-01), Consiglio et al.
patent: 5733794 (1998-03-01), Gillbert et al.

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