Method for making Schottky barrier diodes with engineered height

Details Method for making Schottky barrier diodes with engineered height Method for making Schottky barrier diodes with engineered height

1980-11-10

1983-12-20

Smith, John D.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 427 84, 427 88, H01L 2126

Patent

active

044215770

ABSTRACT:
Schottky barrier diodes with engineered barrier heights in III-V semiconductor material are disclosed. By fabricating the diodes using a very clean and defect free surface, the barrier height can be controlled by introducing selected amounts of dopant in the surface prior to evaporation of a contact metal. By selecting a dopant having the same conductivity as the semiconductor material a reliable ohmic contact can be provided.

REFERENCES:
patent: 4045248 (1977-08-01), Shannon
patent: 4211587 (1980-07-01), Massies

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