Method for making Schottky barrier diodes

Details Method for making Schottky barrier diodes Method for making Schottky barrier diodes

1976-04-09

1978-08-29

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

148 15, 148177, 357 15, 427 8, 427 38, 427 85, 427 93, 427383D, H01L 2166, H01L 2948

Patent

active

041104889

ABSTRACT:
A plurality of Schottky barrier devices are produced by a method which uses a relationship between barrier height, surface concentration of impurities, and alloying time valid when a thin layer of oxide is present on a device substrate and includes the steps of preselecting an impurity concentration for the principal surface of a plurality of silicon substrates and using a predetermined alloying time for each substrate to achieve a preselected barrier height.

REFERENCES:
patent: 3290127 (1966-12-01), Kahng et al.
patent: 3496631 (1970-02-01), Chen
patent: 3579278 (1971-05-01), Heer
patent: 3841904 (1974-10-01), Chiang
patent: 3849789 (1974-11-01), Cordes et al.
patent: 3900344 (1975-08-01), Magdo
patent: 4056642 (1977-11-01), Saxena et al.

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