Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-02-09
1977-06-07
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148188, H01L 2122
Patent
active
040281507
ABSTRACT:
A substantial increase in the reliability of metal-oxide-semiconductor field effect transistor (MOSFET) devices having a thin gate dielectric is achieved by providing a thin film of phosphosilicate glass (PSG) on the thin dielectric and completely covering the PSG layer with the gate metallization. The metallization extends over a thick film of phosphosilicate glass which is disposed on the thick insulator covering the source and drain regions.
REFERENCES:
patent: 3300339 (1967-01-01), Perri et al.
patent: 3343049 (1967-09-01), Miller et al.
patent: 3476619 (1969-11-01), Tolliver
patent: 3497407 (1970-02-01), Esch et al.
patent: 3507716 (1970-04-01), Nishida et al.
patent: 3512057 (1970-05-01), Hatcher, Jr.
patent: 3560810 (1971-02-01), Balk et al.
Collins Robert Henry
Levine Richard F.
North William D.
O'Rourke Gerald D.
Parker Gerald R.
Davis J. M.
Galvin Thomas F.
IBM Corporation
Rutledge L. Dewayne
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