Method for making recessed field oxide for radiation hardened mi

Details Method for making recessed field oxide for radiation hardened mi Method for making recessed field oxide for radiation hardened mi

1997-12-29

2000-05-16

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

H01L 2176

Patent

active

060636904

ABSTRACT:
A method of forming a recessed electrically-insulating field oxide region in a semiconductor substrate is disclosed. In a preferred embodiment, the method includes the steps of oxidizing a surface of the substrate; depositing a polysilicon layer over the oxide layer; depositing a silicon nitride layer over the polysilicon layer; patterning the silicon nitride and polysilicon layers and etching away both layers where the field oxide is to be located; forming a field oxide by thermally oxidizing the substrate in the openings previously formed in the silicon nitride and polysilicon layers; etching away the thermal field oxide; thermally oxidizing the substrate in the etched-away field oxide areas; etching away the silicon nitride layer; optionally, implanting through the thermal oxide with an impurity; depositing a doped oxide; densifying the oxide in a steam ambient; etching back the deposited oxide; then either depositing an undoped CVD oxide, coating the oxide with a leveling layer to planarize the oxide surface, etching both the undoped CVD oxide and leveling layers and etching away the polysilicon; or etching away the polysilicon, leaching the dopants out of the surface of the field oxide structure and passivating the surface in a dry oxygen ambient.

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