Method for making power integrated circuit

Details Method for making power integrated circuit Method for making power integrated circuit

1997-11-17

2000-01-25

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

438133, H01L 21332

Patent

active

060177780

ABSTRACT:
A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.

REFERENCES:
patent: 3246206 (1966-04-01), Chowdhuri
patent: 4158214 (1979-06-01), Bolus et al.
patent: 4278985 (1981-07-01), Stobbs
patent: 5817546 (1998-10-01), Ferla et al.
French Search Report from French Patent Application 94 16011, filed Dec. 30, 1994.
French Search Report from French Patent Application 93 04860, dated Jan. 7, 1994.

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