Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1995-07-18
1999-03-23
Brown, Peter Toby
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438255, H01L 218242
Patent
active
058858822
ABSTRACT:
An electrode structure for use on an integrated circuit, and a method for forming the same. The electrode structure is formed by depositing a polysilicon layer on a dielectric layer. The polysilicon layer is then annealed until a plurality of non-contiguous polysilicon clusters are formed. Each of the non-contiguous polysilicon clusters has a base end and a top end. The base ends of the non-contiguous clusters are preferably separated by a spacing (S). Following the annealing step, the non-contiguous polysilicon clusters are connected electrically by depositing a conductive layer having a thickness (T) over the annealed polysilicon layer. The spacing (S) is preferably greater than twice the thickness (T).
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Schugraf Klaus F.
Thakur Randhir P. S.
Brown Peter Toby
Micro)n Technology, Inc.
Thomas Toniae M.
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