Method for making PMC type memory cells

Details Method for making PMC type memory cells Method for making PMC type memory cells

2006-12-21

2010-11-16

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE45002, C365S182000

Reexamination Certificate

active

07833822

ABSTRACT:
A microelectronic device includes: at least one cell or element including at least one first electrode, at least one second electrode, and at least one stack of thin layers between the first electrode and the second electrode. The stack includes at least one doped chalcogenide layer capable of forming a solid electrolyte, the doped chalcogenide layer being provided on and in contact with the first electrode; at least one interface layer provided on and in contact with the doped chalcogenide layer, the interface layer being based on a material different from the chalcogenide, the material being carbon or carbon comprising a metallic additive or a semiconducting additive; and at least one metallic ion donor layer provided on and in contact with the interface layer, the metallic ion donor layer being an ion source for the solid electrolyte.

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U.S. Appl. No. 11/722,761, filed Jun. 25, 2007, Sousa.

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