Fishing – trapping – and vermin destroying
Patent
1986-08-14
1989-03-07
Roy, Upendra
Fishing, trapping, and vermin destroying
357 237, 437 2, 437 24, 437 29, H01L 2176, H01L 21265
Patent
active
048106640
ABSTRACT:
A method for producing buried oxide layers in selected portions of a semiconductor substrate including the steps of applying a patterned mask made from a high-density material over a semiconductor substrate and selectively forming buried oxide layers by oxygen ion implantation. The high-density material of the mask is preferably tungsten, but can also be made from other suitable materials such as silicon nitride. A MOS transistor is made by the process of the present invention by applying the high-density mask material over the gate of the transistor, and forming buried oxide layers by ion implantation beneath only the source region and drain region of the transistor. The completed MOS transistor has the characteristics of reduced drain and source capacitance, reduced leakage, and faster response, but does not suffer from the floating-body effect of MOS transistors made by SOI processes.
REFERENCES:
patent: 4412828 (1983-11-01), Brown et al.
patent: 4465705 (1984-08-01), Ishihara et al.
patent: 4523213 (1985-06-01), Konaka et al.
patent: 4604329 (1986-08-01), Reber
patent: 4612408 (1986-09-01), Moddel et al.
patent: 4633034 (1986-12-01), Premnath et al.
patent: 4676841 (1987-06-01), Celler
patent: 4683637 (1987-08-01), Varker et al.
patent: 4700454 (1987-10-01), Baerg et al.
patent: 4706378 (1987-11-01), Havemann
patent: 4717677 (1988-01-01), McLaughlin et al.
Arienzo et al., IBM-TDB, 27 (1984) 2371.
"Patterned Implanted Buried-Oxide Transistor Structures" by T. I. Kamins, P. J. Marcous, J. L. Moll, and L. M. Roylance; J. Appl. Phys. 60(1), Jul. 1, 1986, 021/8879/86/130423; p. 423.
"A Self-Aligned Oxygen Implanted SOI (Salox SOI) Technology" By J. C. Tzeng, W. Baerg, C. Ting, B. Siu; 1986 Device Research Conf.
"The Top Silicon Layer of SOI Formed by Oxygen Ion Implantation", By Pinizzotto, Vaandrager, Matteson, Lam and Malhi, IEEE Trans. Nuclear Science, NS-30, 1718 (1983).
"Characterization of Buried SiO.sub.2 Layers Formed by Ion Implantation of Oxygen", by S. R. Wilson, J. Electronic Materials 13, 127 (1984).
Characteristics of Submicrometer CMOS Transistors in Implanted-Buried-Oxide SOI Films, by Hashimoto, Kamins, Cham and Chiang, 1985 International Electron Devices Meeting Digest (Washington, DC, Dec. 2-4, 1985), Paper 28.1, p. 672.
Colinge Jean-Pierre
Kamins Theodore I.
Marcoux Paul J.
Moll John L.
Roylance Lynn M.
Hewlett--Packard Company
Hickman Paul L.
Roy Upendra
LandOfFree
Method for making patterned implanted buried oxide transistors a does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making patterned implanted buried oxide transistors a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making patterned implanted buried oxide transistors a will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1668550