Method for making optical semiconductor element

Details Method for making optical semiconductor element Method for making optical semiconductor element

1996-02-22

1999-06-29

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 39, H01L 2100

Patent

active

059181095

ABSTRACT:
A method for making an optical semiconductor element including the steps of: forming two growth-blocking mask stripes of silicon dioxide film on a first conductivity type compound semiconductor substrate; selectively forming a double-heterostructure which comprises a first conductivity type cladding layer, a light absorption layer and a second conductivity type cladding layer on a mask opening region by the metal organic vapor phase epitaxy method; partially removing the mask stripes on both sides of the double-heterostructure and opposite sides of the mask stripes thereof to provide further opening regions; and selectively forming a burying structure on the double-heterostructure by the metal organic vapor phase epitaxy method.

REFERENCES:
patent: 4852116 (1989-07-01), Takiguchi et al.
patent: 5479427 (1995-12-01), Yoshida et al.
patent: 5524017 (1996-06-01), Endo
patent: 5543957 (1996-08-01), Koui et al.
patent: 5614436 (1997-03-01), Shim et al.
1991 Denshi Joho Tsushin Gakkai Shukki Daikai C-133, p. 4-163, Sep. 1991 (No translation).
Pp. 153 to 154 of "Electronics Letters", 16th Jan. 1992, vol. 28, No.2.
Pp. 8 to 9 of "OFC" Technical Digest (1994) DFB-LD/modulator integrated light sources fabricated by band-gap-energy-controlled selective MOVPE with stable fiber-transmission characteristics.

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