Method for making n-type semiconductor diamond

Details Method for making n-type semiconductor diamond Method for making n-type semiconductor diamond

1998-02-24

2000-08-29

Tsai, Jey

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117104, 117929, 438105, 438547, 438548, 438558, 438565, 438567, 438706, C30B 2814, C30B 2904, H01L 2100, H01L 2138

Patent

active

061102768

ABSTRACT:
A method for making n-type semiconducting diamond by use of CVD in which n-type impurities are doped simultaneously with the deposition of diamond. As the n-type impurities, an Li compound and a B compound, both, are used at once. After doping, a diamond film thus obtained is etched to peel off its surface. The n-type semiconducting diamond is superior in specific resistivity, 10.sup.-2 .OMEGA.cm or less.

REFERENCES:
patent: 5006203 (1991-04-01), Purdes
patent: 5051785 (1991-09-01), Beetz, Jr. et al.
patent: 5079425 (1992-01-01), Imai et al.
patent: 5235236 (1993-08-01), Nakahata et al.
patent: 5254862 (1993-10-01), Kalyankjumar et al.
patent: 5653800 (1997-08-01), Kucherov et al.
patent: 5680008 (1997-10-01), Brandes et al.
patent: 5720808 (1998-02-01), Hirabayashi et al.
patent: 5747118 (1998-05-01), Bunshah et al.
"The Study on the Heteropitaxial Growth . . . " by Yoon-Kee Kim, Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Ph.D. Thesis, 1997, pp13.
"Properties and Applications of Diamond," John Wilks et al., Butterworth heinemann, 1991, pp. 7-27.
"Field Emission from P-Type Polycrystalline Diamond Films," D. Hong et al., J. Vac. Sci. Technol. B., 13(2), Mar/Apr. 1995, pp. 427-430.
"Boron Doped Diamond Films: electrical and optical characterization . . . ," by R. Locher et al., Materials Science and Engineering B29, 1995, pp. 211-215.
"Effect of Annealing in Air on Electrical Resistances of B-Doped Polycrystalline Diamond Films," Koichi Miyata et al., Jpn. J. Appl. Phys. 33, 1994, pp. 4526-4533.
"Diamond: Electronic Properties and Applications," by L.S. Pan et al., Kluwer Academic Publishers, 1995, pp. 153-168.
"Doping Diamond for Electronic Applications," R. Kalish, Proceedings of the International Diamond Symposium, Seoul 1996, pp. 45-50.
"Prospective N-Type Impurities and Methods of Diamond Doping," G. Popovici et al., Diamond and Related Materials, 4 (1995), pp. 1305-1310.

Affiliated with

Also associated with

Rating

Method for making n-type semiconductor diamond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making n-type semiconductor diamond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making n-type semiconductor diamond will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1245344