Method for making multiple wavelength semiconductor lasers on a

Details Method for making multiple wavelength semiconductor lasers on a Method for making multiple wavelength semiconductor lasers on a

1998-06-04

2000-03-07

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 35, 438936, 438956, H01L 2120

Patent

active

060339268

ABSTRACT:
A plurality of different wavelength semiconductor lasers are fabricated on a single semiconductor substrate by establishing a thermal gradient across the substrate during epitaxial growth. The result is a variation in composition which produces a corresponding variation of laser wavelength across the substrate. The thermal gradient is preferably achieved by disposing a patterned layer of material (heat reflecting or heat absorbing) on the back side of the substrate, radiatively heating the backside and growing the active layers on the front side. The backside layer is removed when the substrate is lapped to final thickness.

REFERENCES:
patent: 4148045 (1979-04-01), Fang et al.
patent: 4309667 (1982-01-01), DiForte et al.

Affiliated with

Also associated with

Rating

Method for making multiple wavelength semiconductor lasers on a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making multiple wavelength semiconductor lasers on a , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making multiple wavelength semiconductor lasers on a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-362232