Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Reexamination Certificate
2005-06-07
2005-06-07
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
Reexamination Certificate
active
06902958
ABSTRACT:
An anti-fuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A channel is formed between the source and drain regions. A gate and gate oxide are formed on the channel and lightly doped source and drain extension regions are formed in the channel. The lightly doped source and drain regions extend across the channel from the source and the drain regions, respectively, occupying a substantial portion of the channel. Programming of the anti-fuse is performed by application of power to the gate and at least one of the source region and the drain region to break-down the gate oxide, which minimizes resistance between the gate and the channel.
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Buer Myron J.
Ito Akira
Smith Douglas D.
Broadcom Corporation
Dolan Jennifer M
Sterne Kessler Goldstein & Fox P.L.L.C.
Thompson Craig A.
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